| Sr. No. | Date | HS Code | Country | Description | Quantity | Unit | Per Unit (INR) | Value (INR) | Port of Discharge | Cus.Duty / CCR | More Details |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 | 23-Aug-16 | 85412100 | UNITED STATES | FAIRCHILD MOSFET-512-FDN306P | 100 | PCS | 14 | 1363 | Bangalore ACC | Duty | more |
| 2 | 13-Apr-16 | 85412900 | UNITED STATES | TRANSISTORS - FDN306P-F095 | 33 | NOS | 23.99 | 791.82 | Bangalore ACC | Duty | more |
| 3 | 26-Nov-15 | 85412900 | UNITED STATES | TRANSISTORS - FDN306P-F095-ND | 20 | NOS | 27.83 | 556.53 | Bangalore ACC | Duty | more |
| 4 | 07-Jul-15 | 85412900 | UNITED STATES | TRANSISTORS - 512-FDN306P-F095 | 12 | NOS | 21.62 | 259.39 | Bangalore ACC | Duty | more |
| 5 | 16-Apr-15 | 85412900 | UNITED STATES | TRANSISTOR FDN306P P/N SAN-01TR0004 S/N FDN306P | 2400 | NOS | 10.74 | 25787.62 | Bangalore ACC | Duty | more |
| 6 | 23-Mar-15 | 85414090 | UNITED STATES | MOSFET P/NO- 512-FDN306P | 42 | PCS | 25.49 | 1070.54 | Bangalore ACC | Duty | more |
| 7 | 25-Feb-15 | 85331000 | UNITED STATES | TRANSISTORS FDN306P | 150 | NOS | 14.12 | 2118.19 | Bangalore ACC | Duty | more |
| 8 | 23-Feb-15 | 85412100 | UNITED STATES | TRANSISTOR FDN306P | 3050 | NOS | 8.82 | 26901.7 | Bangalore ACC | Duty | more |
| 9 | 25-Nov-14 | 85412900 | JAPAN | TR, MOSFET P-CH 12V SOT-3 FDN306P | 80 | PCS | 24.3 | 1943.69 | Bangalore ACC | Duty | more |
| 10 | 29-Oct-14 | 85412900 | CHINA | 512-FDN306P FAIRCHILD MOSFET (TRANSISTOR) | 240 | NOS | 13.52 | 3244.78 | Bangalore ACC | Duty | more |
| 11 | 12-May-14 | 85412900 | UNITED STATES | FAIRCHILD MOSFET (P/N: 512-FDN306P) | 10 | NOS | 23.35 | 233.54 | Hyderabad ACC | Duty | more |
| 12 | 07-May-14 | 85412900 | TAIWAN | FDN306P FAIRCHILD MOSFET (TRANSISTOR) | 4000 | NOS | 8.19 | 32756.99 | Delhi Air Cargo ACC | Duty | more |
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Data post 2012 as per Notification No.18/2012 - Customs(N.T.) and does not have names of Indian companies and Foreign Companies.
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